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Rev. Mod. Phys. 78, 1185–1212 (2006)

Electrostatic modification of novel materials

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C. H. Ahn
Department of Applied Physics,Yale University, New Haven, Connecticut 06520–8120, USA

A. Bhattacharya
Argonne National Laboratory, 9700 S. Cass Ave., Argonne, Illinois 60439, USA

M. Di Ventra
Department of Physics, University of California San Diego, La Jolla, California 92093, USA

J. N. Eckstein
Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA

C. Daniel Frisbie
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, USA

M. E. Gershenson
Department of Physics and Astronomy, Rutgers, the State University of New Jersey, Piscataway, New Jersey 08854, USA

A. M. Goldman
School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455, USA

I. H. Inoue
Correlated Electron Research Center, National Institute of Advanced Industrial Science and Technology, AIST Tsukuba Central, Tsukuba, Japan

J. Mannhart
Experimentalphysik VI, Center for Electronic Correlations and Magnetism, Institute of Physics, Augsburg University, D-86135 Augsburg, Germany

Andrew J. Millis
Department of Physics, Columbia University, New York, New York 10027, USA

Alberto F. Morpurgo
Kavli Institute of Nanoscience, Delft University, Lorentzweg 1, 2628 CJ Delft, The Netherlands

Douglas Natelson
Department of Physics and Astronomy, Rice University, Houston, Texas 77005, USA

Jean-Marc Triscone
Ecole de Physique, Département de Physiques de la Matière Condensée, 24 quai Ernest-Ansermet, 1211 Genève 4, Switzerland

Published 10 November 2006

Application of the field-effect transistor principle to novel materials to achieve electrostatic doping is a relatively new research area. It may provide the opportunity to bring about modifications of the electronic and magnetic properties of materials through controlled and reversible changes of the carrier concentration without modifying the level of disorder, as occurs when chemical composition is altered. As well as providing a basis for new devices, electrostatic doping can in principle serve as a tool for studying quantum critical behavior, by permitting the ground state of a system to be tuned in a controlled fashion. In this paper progress in electrostatic doping of a number of materials systems is reviewed. These include structures containing complex oxides, such as cuprate superconductors and colossal magnetoresistive compounds, organic semiconductors, in the form of both single crystals and thin films, inorganic layered compounds, single molecules, and magnetic semiconductors. Recent progress in the field is discussed, including enabling experiments and technologies, open scientific issues and challenges, and future research opportunities. For many of the materials considered, some of the results can be anticipated by combining knowledge of macroscopic or bulk properties and the understanding of the field-effect configuration developed during the course of the evolution of conventional microelectronics. However, because electrostatic doping is an interfacial phenomenon, which is largely an unexplored field, real progress will depend on the development of a better understanding of lattice distortion and charge transfer at interfaces in these systems.

© 2006 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/RevModPhys.78.1185
DOI:
10.1103/RevModPhys.78.1185
PACS:
73.90.+f, 72.90.+y, 73.43.Nq
 
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